Micron Launches New Product Category of Low-Standby-Power DDR3Lm With 2Gb and 4Gb Products, Ideal for Ultrathin and Tablet Markets
First DDR3 to Provide Substantially Less Self-Refresh Power, Yielding Longer Battery Life
BOISE, Idaho, Feb. 9, 2012 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (Nasdaq:MU) is extending its legacy of memory leadership by introducing a new product category of low-power DDR3 solutions targeted at the tablet and ultrathin markets. These 2-gigabit (Gb) and 4Gb "DDR3Lm" solutions focus on low self-refresh power (IDD6) for longer battery life, while maintaining the high performance and cost effectiveness of PC DRAM.
The first 2Gb DDR3Lm will provide up to 50 percent self-refresh power savings versus standard 2Gb DDR3L while driving performance up to -1600 MT/s when needed. Micron's 4Gb DDR3Lm product delivers the same optimized power efficiency as the 2Gb part, with a reduced chip count that is ideally suited for ultrathin and tablet customers. Both 2Gb and 4Gb DDR3Lm will be adopted into Micron's 30-nanometer (nm) class to further optimize the power and performance features, with the 4Gb device hitting a 3.7mA IDD6 target in standby mode, yet still supporting speeds up to -1866 MT/s.
"Power reduction is becoming ever more critical in the fast growing ultrathin markets. Micron's expertise with traditional PC memory requirements enables these markets to enjoy high performance targets and optimal cost efficiencies," said Robert Feurle, vice president for Micron's DRAM marketing. "The combination of our commitment to customer collaboration and dedication to leading the way in DRAM technologies has proven highly successful, and this new class of 30nm DRAM continues to deliver on that promise."
"As computing becomes more and more mobile, longer battery life is increasingly valuable to end users," said Geof Findley, Intel's senior memory enabling manager. "The reduced standby power consumption of low-power memory is a move in the right direction."
Sampling of Micron's new DDR3Lm low-power product line begins now, with volume production on 30nm class devices expected to begin in 2Q'12. For more information about DDR3Lm, visit http://www.micron.com/products/dram/ddr3-sdram.
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Micron Technology, Inc., is one of the world's leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets a full range of DRAM, NAND and NOR flash memory, as well as other innovative memory technologies, packaging solutions and semiconductor systems for use in leading-edge computing, consumer, networking, embedded and mobile products. Micron's common stock is traded on the NASDAQ under the MU symbol. To learn more about Micron Technology, Inc., visit www.micron.com.
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©2012 Micron Technology, Inc. All rights reserved. Information is subject to change without notice. Micron and the Micron orbit logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This news release contains forward-looking statements regarding the production of DDR3Lm. Actual events or results may differ materially from those contained in the forward-looking statements. Please refer to the documents Micron files on a consolidated basis from time to time with the Securities and Exchange Commission, specifically Micron's most recent Form 10-K and Form 10-Q. These documents contain and identify important factors that could cause the actual results for Micron on a consolidated basis to differ
materially from those contained in our forward-looking statements (see Certain Factors). Although we believe that the expectations reflected in the forward-looking statements are reasonable, we cannot guarantee future results, levels of activity, performance or achievements.
CONTACT: Scott Stevens
Micron Technology, Inc.
Source: Micron Technology, Inc.
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