Boise, Idaho , Tuesday, December 09, 2008 – Micron Technology, Inc. today introduced a serial NAND flash memory technology, providing embedded applications with the flexibility to easily upgrade their storage capacity. With chip density starting at 1 gigabit (Gb), Micron's serial NAND flash allows customers to easily and cost-effectively extend their storage capacity beyond what is currently available with serial NOR flash, and it provides a significant cost-per-bit advantage.
"Micron's serial NAND offers the lowest cost-per-bit serial interface flash on the market," said Kevin Kilbuck, director of NAND market development for Micron. "There are several embedded applications today that require 128 megabytes or more of storage, and we expect capacity to continue to grow, providing the need for a NAND-based storage alternative to NOR flash."
As embedded systems evolve, they are requiring more robust and higher-density memory solutions. Gone are the days when WiMAX devices, set-top boxes, printers and other industrial and automotive applications were designed only to decode information. They now contain more sophisticated operating systems for managing multimedia, photos and other data-intensive content, which are driving the need for these devices to contain greater storage capacity.
Recognizing these application needs, Micron has leveraged its trusted NAND technology, providing customers with a storage solution that offers increased density, improved write performance and greater scalability—allowing them to expand their application storage capacity without having to perform a complete system redesign. Additionally, Micron's serial NAND utilizes the same package type as parallel NAND, effectively acting as a transitional gateway for manufacturers to move from a serial into a parallel NAND interface, if and when needed.
Micron Serial NAND Technical Advantages
Micron's 1Gb serial NAND technology is sampling now with volume production expected in the first quarter of 2009. Micron also plans to introduce higher-density serial NAND flash products reaching 4Gb in early 2009.
Micron Technology, Inc. is one of the world's leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets DRAMs, NAND flash memory, CMOS image sensors, other semiconductor components, and memory modules for use in leading-edge computing, consumer, networking, and mobile products. Micron’s common stock is traded on the New York Stock Exchange (NYSE) under the MU symbol. To learn more about Micron Technology, Inc., visit www.micron.com.
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This press release contains forward-looking statements regarding the production of serial NAND flash technology. Actual events or results may differ materially from those contained in the forward-looking statements. Please refer to the documents the Company files on a consolidated basis from time to time with the Securities and Exchange Commission, specifically the Company's most recent Form 10-K and Form 10-Q. These documents contain and identify important factors that could cause the actual results for the Company on a consolidated basis to differ materially from those contained in our forward-looking statements (see Certain Factors). Although we believe that the expectations reflected in the forward-looking statements are reasonable, we cannot guarantee future results, levels of activity, performance or achievements. We are under no duty to update any of the forward-looking statements after the date of this press release to conform to actual results.
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